发明名称 FILMING METHOD, AND TREATING SYSTEM
摘要 <p>Disclosed is a filming method for forming a thin film on a treating object (W) which has an insulating layer (4) formed with a recess (6) on its surface. In the filming method, there are sequentially executed the barrier layer forming step of forming a Ti-containing barrier layer (12) on the surface of the treating object including the surface in the recess, the seed layer forming step of forming a Ru-containing seed layer (16) over the barrier layer by a CVD, and the auxiliary seed layer forming step of forming a Cu-containing auxiliary seed layer (164) over the seed layer by a sputtering. All over the surface of the treating object, therefore, a sufficient padding can be made on either the recess having a small line width or hole diameter or the recess having a high aspect ratio.</p>
申请公布号 WO2009001896(A1) 申请公布日期 2008.12.31
申请号 WO2008JP61645 申请日期 2008.06.26
申请人 TOKYO ELECTRON LIMITED;IKEDA, TARO;WAKABAYASHI, SATOSHI;NARUSHIMA, KENSAKU;HATANO, TATSUO;MIZUSAWA, YASUSHI;YOKOYAMA, OSAMU;SAKUMA, TAKASHI 发明人 IKEDA, TARO;WAKABAYASHI, SATOSHI;NARUSHIMA, KENSAKU;HATANO, TATSUO;MIZUSAWA, YASUSHI;YOKOYAMA, OSAMU;SAKUMA, TAKASHI
分类号 H01L21/28;C23C16/14;H01L21/285;H01L21/288;H01L21/3205;H01L23/52 主分类号 H01L21/28
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