| 摘要 |
<p>This is a new photovoltaic device comprising at least one front emitter (2) made of a p- or n-doped semiconductor material, coupled with at least one rear part (3) made of an n- or p-doped semiconductor material, wherein the front part (2.1) of said emitter (2) is connected to a plurality of metal contacts (4) located at the back of the device by means of one or more diffuscr elements (2.3) in the shape of plates, ducts or generic elements in relief made of p- or n-doped semiconductor material and extending from said front part (2.1) of the emitter (2) through all or part of said n- or p-doped part (3).</p> |
