METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE

摘要

The method of forming the fine pattern in the semiconductor device is provided to secure the linewidth uniformity of pattern by implementing the micro-pattern of the extent like the double patterning technique through one photolithography monitoring process. The method of forming the fine pattern in the semiconductor device comprises as follows. A step is for successively forming the etch stopping layer(22) on the etched layer(20) and sacrificing layer. A step is for forming the photoresist pattern on the sacrificing layer. A step is for forming the sacrificial layer pattern by etching the sacrificing layer using the etching barrier as the photoresist pattern. A step is for forming the spacer(25) in the side wall of the sacrificial layer pattern. A step is for removing the sacrificial layer pattern. A step is for successively etching the etch stopping layer and etched layer uisng the space as the etching barrier.