发明名称 CHARGED PARTICLE BEAM WRITING METHOD
摘要 <p>A charged particle beam writing method is provided to perform pattern of a high accuracy by preventing a thermal deterioration of writing accuracy. A charged particle beam writing method writes a first sample using a charged particle beam within a writing device(100), and not performs a return action of a second sample during the first sample writing although the second sample is arranged in one side among a carrier path including an entrance(120) and an exit of the writing device. The return of the second sample is performed after completing the writing of the first sample.</p>
申请公布号 KR20080114597(A) 申请公布日期 2008.12.31
申请号 KR20080060542 申请日期 2008.06.26
申请人 NUFLARE TECHNOLOGY INC. 发明人 SUNAOSHI HITOSHI
分类号 H01L21/027 主分类号 H01L21/027
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