发明名称 METHOD FOR FABRICATING IN PHOTO MASK
摘要 <p>A method for manufacturing a photo mask is provided to prevent an under cut phenomenon induced by the over etch of a substrate by forming an optical shielding layer pattern which is intaglio-patterned inside the photo mask. A resist pattern is formed on a mask substrate(100). The exposed mask substrate with a constant thickness is etched by the resist pattern. The resist pattern is removed. The optical shielding layer pattern is formed on the mask substrate etched with the constant thickness. An optical shielding layer pattern(131) is formed in the mask substrate by performing a planarization process exposing the upper surface of the mask substrate.</p>
申请公布号 KR20080114411(A) 申请公布日期 2008.12.31
申请号 KR20070063937 申请日期 2007.06.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YANG, KI HO
分类号 H01L21/027 主分类号 H01L21/027
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