| 摘要 |
A semiconductor memory device including distinction signal generator, selective delay unit, and fuse circuit is provided to improve a tAA which is important figure of merit of the semiconductor memory device by reducing a delay value of a command sequence signal at reading. A semiconductor memory device comprises a distinction signal generator(100), a selective delay unit(200), and a fuse circuit(300). The distinction signal generator generates a distinction signal indicating a writing operation of the memory device. The selective delay unit selectively delays an operation in response to the distinction signal. The fuse circuit determines either performing a selective delay operation or performing a steady delay operation regardless of the distinction signal.
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