| 摘要 |
A method for forming an element isolating layer of a semiconductor device is provided to secure a process margin, a yield, and an element characteristic by controlling an EFH(Effective Field Height) of the element isolating layer and completely gap-filling the trench without a void. A tunnel insulating layer(102), a conductive layer(104), and a hard mask layer are formed in an active region. A semiconductor substrate(100) with a trench is provided in an element isolating region. A first insulating layer(114) is filled in the trench. The first insulating layer is etched by an etching process. The first insulating layer is densified by performing a first heat process. The element isolating layer is formed by forming a second insulating layer(116) inside the trench including a first insulating layer. An EFH of the element isolating layer is controlled by etching the first and second insulating layers.
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