| 摘要 |
A semiconductor memory device including a write driving device is provided to remove a problem due to a level lowering of a core voltage by overdriving an initial section in which data are driven using an external voltage. A semiconductor memory device including a write driving device comprises a pull-up/pull-down driving unit and an over driving unit(600). The pull-up/pull-down driving unit generates a second data line according to data loaded to a first data line. The driving unit overdrives to an external voltage higher than a pull-up voltage of the pull-up/pull-down driving unit in an initial of a pull-up section of the second data line, and overdrives for a section controlled in response to a test signal.
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