发明名称 |
Multiple exposure method with reduction of printed assist features |
摘要 |
A method of transferring a lithographic pattern onto a substrate by use of a lithographic apparatus. The method includes the steps of: (1) defining features to be printed on the substrate; (2) determining which of the features require assist features to be disposed adjacent thereto in order for the features to be printed within defined resolution limits; (3) generating a mask containing the features to be printed and the assist features; (4) performing a first illumination process so as to print the features on the substrate, the first illumination process resulting in the partial printing of the assist features on the substrate; and (5) performing a second illumination process so as to reduce the amount of the assist features printed on the substrate; the second illumination process entails the step of performing a quadrapole illumination. <IMAGE> |
申请公布号 |
EP1316851(B1) |
申请公布日期 |
2008.12.31 |
申请号 |
EP20020258207 |
申请日期 |
2002.11.28 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
EURLINGS, MARKUS FRANCISCUS ANTONIUS;CHEN, JAN FUNG;HSU, DUAN-FU STEPHEN |
分类号 |
G03F7/20;G03F1/00;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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