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发明名称
Method of producing a p-type conductive layer in semiconductive devices
摘要
申请公布号
PL200058(B1)
申请公布日期
2008.12.31
申请号
PL20010347532
申请日期
2001.05.14
申请人
INSTYTUT TECHNOLOGII ELEKTRONOWEJ
发明人
KAMI&NACUTE,SKA ELIANA;PIOTROWSKA ANNA
分类号
H01L31/0216;H01L33/00
主分类号
H01L31/0216
代理机构
代理人
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