| 摘要 |
A switch device and a manufacturing method thereof are provided to reduce a contact resistance by increasing the contact area and perform contact between a conductive layer spacer and a nano structure regardless of a position in which the nano structure is bent. A switch element includes a lower conductive layer(30), a first insulating layer(26), a conductive layer spacer(44), and a nano structure(34). The lower conductive layer is positioned on a substrate(10). The first insulating layer is positioned on the lower conductive layer. The first insulating layer includes a first hole to expose a part of the first lower conductive layer. A conductive layer spacer is formed in an inner wall of the first hole of the first insulating layer. One end of the nano structure is electrically connected to the lower conductive layer. The nano structure includes a nano tube or a nano wire. The nano structure passes through the first hole from the lower conductive layer and is extended vertically. The nano structure is separated from the conductive layer spacer to interpose a working gap. |
