METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE /CDS THIN FILM SOLAR CELL
摘要
<p>A method for the formation of a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film comprising the steps of depositing a layer of As2Te3 on the CdTe layer at a substrate temperature comprised between ambient temperature and 200°C; depositing a layer of Cu on the As2Te3 layer; bringing at least the deposited Cu layer to a temperature comprised between 150° and 250°C. The method is used to form a stable back-contact on CdTe/CdS thin film solar cells.</p>
申请公布号
WO2009001389(A1)
申请公布日期
2008.12.31
申请号
WO2007IT00469
申请日期
2007.06.28
申请人
SOLAR SYSTEMS & EQUIPMENTS S.R.L.;ROMEO, NICOLA;BOSIO, ALESSIO;ROMEO, ALESSANDRO