| 摘要 |
A method for forming a gate of a semiconductor device is provided to improve a characteristic of a tungsten gate electrode by forming the tungsten silicide layer with uniform thickness. A gate insulating layer(120) and a poly silicon layer(130) are formed on a semiconductor substrate(100). A first tungsten silicide layer(140) is formed on the poly silicon layer. A second tungsten silicide layer(141) is formed on the first tungsten silicide layer. A tungsten layer and a hard mask layer are formed on the second tungsten silicide layer. A tungsten gate electrode is formed by patterning a hard mask layer(170), a tungsten layer(160), a second tungsten silicide layer, a first tungsten silicide layer, a poly silicon layer, and a gate insulating layer.
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