| 摘要 |
A semiconductor memory device with input block is provided to reduce a current consumption of a semiconductor memory device by reducing a swing width of a driving signal using a level shifter. A semiconductor memory device with input block having small driving current comprises a buffer driving control unit(10), a buffer unit(20, 30, 40), and an internal circuit(50). The buffer driving control unit generates a driving signal which is swung using a ground voltage and an internal voltage having a lower voltage level than an external voltage. The buffer unit outputs an internal signal by sensing a level of an external signal about a reference voltage in response to the driving signal. The internal circuit performs an operation corresponding to the internal signal.
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