| 摘要 |
The method of forming the device isolating film of the semiconductor device is provided to prevent O2 from being diffused into the semiconductor substrate by trapping O2 in the polysilicon layer in a wet annealing process. The method of forming the device isolating film of the semiconductor comprises as follows. A step is for forming the trench(T) by etching each region of the semiconductor substrate(200) segmented by the cell region(C) and peripheral circuit region(P). A step is for forming the linear nitride film(208) on the trench surface of the cell region. A step is for forming the oxygen trapping film on the trench surface of the linear nitride film of the cell region and peripheral circuit region. A step is for forming the SOD film(212) on the oxygen trapping film. A step is for annealing the SOD film.
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