| 摘要 |
A metal wiring forming method of a semiconductor device is provided to improve a miss align of a following patterning process by improving surface topology as aluminum metal wiring of the low temperature is deposited on the top of an aluminum metal wiring after depositing the aluminum metal wiring of high temperature in advance. A metal wiring forming method of a semiconductor device comprises: a step for forming a contact hole by etching an interlayer insulating film after the interlayer insulating film is deposited at the upper part of a semiconductor substrate(200); a step for gap-filling the contact hole by depositing a metal wiring(210) of high temperature in the contact hole; and a step for depositing a metal wiring(212) of low temperature to the metal wiring upper surface of high temperature.
|
