发明名称 |
Method for programming a memory device suitable to minimize the lateral coupling effects between memory cells |
摘要 |
A method programs a memory device that includes at least one memory cell matrix. The programming method the steps of: erasing the memory cells; soft programming the memory cells; and complete programming of a group of such memory cells each of them storing its own logic value. Advantageously, the first complete programming step of a group of such memory cells involves cells belonging to a block (A) of the matrix being electrically insulated from the rest of the matrix. A memory device suitable to implement the proposed method is also described.
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申请公布号 |
US7471571(B2) |
申请公布日期 |
2008.12.30 |
申请号 |
US20060348513 |
申请日期 |
2006.02.06 |
申请人 |
VISCONTI ANGELO;BONANOMI MAURO |
发明人 |
VISCONTI ANGELO;BONANOMI MAURO |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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