发明名称 Reducing effects of program disturb in a memory device
摘要 A method for programming that biases a selected word line with a programming voltage. An unselected word line on the source side and an unselected word line on the drain side of the selected word line are biased at a pass voltage that is less than the normal pass voltage. These unselected word lines are both located a predetermined distance from the selected word line. The remaining word lines are biased at the normal pass voltage.
申请公布号 US7471565(B2) 申请公布日期 2008.12.30
申请号 US20060508103 申请日期 2006.08.22
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
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