发明名称 Methods of forming semiconductor constructions
摘要 The invention includes methods by which a fuse box of a semiconductor construction is fabricated to have a substantially uniform layer over fuses extending therein. In particular aspects, the invention includes methods in which one or more processing steps associated with fabrication and patterning of bond pads and redistribution layers is conducted simultaneously over a fuse box region to form and/or remove materials that are directly over the fuse box region.
申请公布号 US7470590(B2) 申请公布日期 2008.12.30
申请号 US20060455023 申请日期 2006.06.15
申请人 MICRON TECHNOLOGY, INC. 发明人 JUENGLING WERNER;MCDONALD STEVEN M.;PAREKH KUNAL R.
分类号 H01L21/336;H01L21/302;H01L23/525 主分类号 H01L21/336
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