| 发明名称 |
TEOS deposition method |
| 摘要 |
A TEOS deposition method. A mixture of gases is introduced into a process chamber, in which the mixture of gases comprises tetra-ethyl-ortho-silicate (TEOS) and N2. Compressive stress of a TEOS oxide film is increased by activating the mixture of gases.
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| 申请公布号 |
US7470584(B2) |
申请公布日期 |
2008.12.30 |
| 申请号 |
US20050040307 |
申请日期 |
2005.01.21 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG YI-LUNG;CHANG HONG-JUI;WANG YING-LANG |
| 分类号 |
H01L21/31;H01L21/469;H01L21/8242 |
主分类号 |
H01L21/31 |
| 代理机构 |
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