发明名称 Semiconductor device with mechanism for leak defect detection
摘要 A semiconductor device includes a plurality of signal terminals, a first power supply terminal, a second power supply terminal, a core circuit coupled to the plurality of signal terminals and the first power supply terminal, a plurality of first transistors coupled between the respective signal terminals and the second power supply terminal, and a plurality of second transistors coupled between the respective signal terminals and a ground potential, wherein the core circuit is configured to make the first transistors conductive and nonconductive alternately and make the second transistors nonconductive and conductive alternately at a time of test operation, such that one of a first transistor and a second transistor being conductive with respect to a given signal terminal requires another one of the first transistor and the second transistor to be nonconductive with respect to the given signal terminal.
申请公布号 US7471099(B2) 申请公布日期 2008.12.30
申请号 US20050085144 申请日期 2005.03.22
申请人 FUJITSU LIMITED 发明人 KURITA YUJI;YAMASHITA HIROYOSHI;NISHIWAKI HITOAKI
分类号 G01R31/02 主分类号 G01R31/02
代理机构 代理人
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