发明名称 |
System and method for controlling the formation of an interfacial oxide layer in a polysilicon emitter transistor |
摘要 |
A method is disclosed for controlling the formation of an interfacial oxide layer in a polysilicon emitter transistor device. The interfacial oxide layer is formed between an underlying substrate of single crystal silicon and an upper layer of polysilicon. The current gain and the emitter resistance of the transistor device are related to the thickness of the interfacial oxide layer. The oxide of the interfacial oxide layer is grown in a low pressure, low temperature pure oxygen (O2) environment that greatly reduces the oxidation rate. The low oxidation rate allows the thickness of the interfacial oxide layer to be precisely controlled and sources of variation to be minimized in the manufacturing process.
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申请公布号 |
US7470594(B1) |
申请公布日期 |
2008.12.30 |
申请号 |
US20050302920 |
申请日期 |
2005.12.14 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
FOOTE, JR. RICHARD W.;COPPOCK WILLIAM MAX;RUST DARREN LEE;DARK CHARLES A. |
分类号 |
H01L21/331;H01L21/8222 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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地址 |
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