发明名称 Internal voltage generation control circuit and internal voltage generation circuit using the same
摘要 Disclosed herein are an internal voltage generation control circuit and an internal voltage generation circuit using the same. The internal voltage generation control circuit comprises a row active controller for enabling a first internal voltage generation control signal when a row active signal is enabled upon input of an active command and then disabling the first internal voltage generation control signal after the lapse of a first predetermined delay time if an RAS activation guarantee signal is enabled at a RAS active time after the first internal voltage generation control signal is enabled, an input/output controller for enabling a second internal voltage generation control signal when the row active signal and at least one of a data input signal and a data output signal are enabled and then disabling the second internal voltage generation control signal after the lapse of a second predetermined delay time if a row precharge signal is enabled or if the data input signal and data output signal are disabled, and a row precharge controller for enabling a third internal voltage generation control signal for a third predetermined delay time if the row precharge signal is enabled.
申请公布号 US7471578(B2) 申请公布日期 2008.12.30
申请号 US20070739684 申请日期 2007.04.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG SANG HEE
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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