发明名称 |
High purity phosphoric acid and process of producing the same |
摘要 |
High purity phosphoric acid having an Sb content of 200 ppb or less and a sulfide ion content of 200 ppb or less as impurity contents on a 85 weight percent H3PO4 basis. The high purity phosphoric acid is useful as an etching solution for semiconductor devices having a silicon nitride film, an etching solution for liquid crystal display panels having an alumina film, a metallic aluminum etching solution, an alumina etching solution for ceramics, a raw material of phosphate glass for optical fiber, a food additive, and so forth. A metallic material having low capability of forming a lithium compound penetrates through the whole thickness of the active material layer 5.
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申请公布号 |
US7470414(B2) |
申请公布日期 |
2008.12.30 |
申请号 |
US20050539441 |
申请日期 |
2005.06.20 |
申请人 |
NIPPON CHEMICAL INDUSTRIAL CO., LTD. |
发明人 |
ISHIKAWA KENICHI;YOKOI KEIZOU;TAKEUCHI KOSUKE;KURITA YUTAKA;UCHIYAMA HEIJI |
分类号 |
C01B25/18;C01B25/238;C01B25/20;C01B25/234;H01L21/308 |
主分类号 |
C01B25/18 |
代理机构 |
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代理人 |
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地址 |
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