| 摘要 |
The solar photocell based on a metal-oxide-n-type silicon structure finds application as a basic element of the solar photoelectric modules used to construct solar generators for electric power production. It consists of an n-type silicon plate, on the face of which there is deposited a dielectric layer with negative charge, so as to form an inverse layer on the surface of the semiconductor. On the face of the solar photocell there are shaped the metal contacts, which form a self-centered p+ area thereunder. The light generated electric carriers are taken with metal contacts of silver-aluminum alloy, under which there is the self-centered p+ area that is in contact with the inverse layer. It is essential to realize self-centered touching of the inverse layer in an n-type semiconductor with the p+ area under the metal contacts. This helps avoid the use of a tunnel-thin layer of silicon oxide as a barrier layer under the metal electrodes, which allows greater technological reproducibility.
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