| 摘要 |
A thin film transistor array, an electrostatic discharge protective device thereof, and methods for fabricating the same are provided. The thin film transistor array comprises a plurality of scan lines, a plurality of data lines, a first shorting bar, and a second shorting bar. The electrostatic discharge protective device comprises a switching device and a resistance line in parallel. If static electricity accumulated on the TFT array is over a predetermined range, the accumulated static electricity will be conducted to the first or second shorting bar via the switching device. The resistance line can prevent signals applied to one of the scan lines or data lines from being conducted to other scan lines or data lines, to detect a defective pixel.
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