| 摘要 |
In a radiation-emitting optoelectronic semiconductor chip comprising an active layer (3) at least one p-doped layer (9) and a layer sequence (8) comprising a plurality of undoped layers (4, 5, 6, 7), which is arranged between the active layer (3) and the p-doped layer (9) and contains at least a first undoped layer (5) and a second undoped layer (6), the second undoped layer adjoining the first undoped layer (5) and succeeding the first undoped layer (5) as seen from the active layer (3), the first undoped layer (5) and the second undoped layer (6) in each case contain aluminum, the aluminum proportion being greater in the first undoped layer (5) than in the second undoped layer (6). The layer sequence (8) advantageously acts as a diffusion barrier for the dopant of the p-doped layer.
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