发明名称 Photodiode with controlled current leakage
摘要 The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current.
申请公布号 US7470966(B2) 申请公布日期 2008.12.30
申请号 US20070774002 申请日期 2007.07.06
申请人 UDT SENSORS, INC. 发明人 BUI PETER STEVEN;TANEJA NARAYAN DASS
分类号 H01L31/06 主分类号 H01L31/06
代理机构 代理人
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