NONVOLATILE MEMORY DEVICE HAVING ENHANCED ERASE CAPABILITY AND METHOD OF FABRICATING THE SAME

摘要

A non-volatile memory device and a manufacturing method thereof are provided to improve an erase characteristic while maintaining a program characteristic of non-volatile memory device including a tunnel oxide layer by reducing a valence band offset of a tunnel oxide layer by nitride-processing the tunnel oxide layer. A tunneling oxide layer(131) is formed on a semiconductor substrate(100). The tunneling oxide layer is nitride-processed. The electron storage layer is formed on the nitride-processed tunneling oxide layer. A gate conductive layer is formed on a charge storage layer. The nitride process is performed by using the plasma. The tunneling oxide layer is the oxide layer with a high dielectric constant.