发明名称 |
GENERATION OF PATTERNS USING ATOMIC FORCE MICROSCOPE NANOLITHOGRAPHY |
摘要 |
<p>The method manufacturing the pattern using the atomic force microscope nanolithography is provided to improve the height of the nano oxidation structure over 100 nm in the lithography using the atomic force microscope. The method for manufacturing the pattern using the atomic force microscope comprises as follows. A step is for irradiating the ion beam of proton or the argon on the substrate. A step is for performing the atomic force microscope lithography on the substrate at which the ion beam is irradiated and for forming the oxidation structure(d) by applying the positive voltage in the atomic force microscope tip(e). .</p> |
申请公布号 |
KR100876398(B1) |
申请公布日期 |
2008.12.29 |
申请号 |
KR20070104745 |
申请日期 |
2007.10.17 |
申请人 |
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) |
发明人 |
LEE, HAI WON;KIM, SUNG KYOUNG |
分类号 |
H01L21/027;G03F7/20 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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