发明名称 PLASMA REACTOR WITH A DYNAMICALLY ADJUSTABLE PLASMA SOURCE POWER APPLICATOR
摘要 A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry. ® KIPO & WIPO 2009
申请公布号 KR20080113159(A) 申请公布日期 2008.12.29
申请号 KR20077027949 申请日期 2007.05.02
申请人 APPLIED MATERIALS INC. 发明人 CHANDRACHOOD MADHAVI R.;LEWINGTON RICHARD;BIVENS DARIN;KUMAR AJAY;IBRAHIM IBRAHIM M.;GRIMBERGEN MICHAEL N.;KOCH RENEE;PANAYIL SHEEBA J.
分类号 H01L21/3065;C23C16/00 主分类号 H01L21/3065
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