METHOD FOR CRYSTALLIZING CHANNEL REGION FOR POLY-SI TFT ARRAY SUBSTRATE BABRICATION USING FALC PROCESS

摘要

A method for crystallizing channel region for poly-Si TFT array substrate fabrication using FALC process is provided to apply poly-Si TFT-LCD, and OLED by regulating crystallization rate of each TFT element. A plurality of thin film transistor elements in which the channel region is made of the amorphous silicon prepares TFT array substrate which is arranged to row and column. A common source electrode spreading along the arrangement direction of row right and left is formed. A common drain electrode which is spread along the parallel to common source electrode direction by connecting one of drain electrode end which are formed each row. A second voltage applying terminal is formed on the right side terminal between the common drain electrodes.