| 摘要 |
The pattern formation method of the semiconductor device is provided to use the single hard mask consisting of polysilicon and reduce the processing step. The pattern formation method of the semiconductor device comprises as follows. A step is for forming the etched layer in top of the substrate having the first area and the second region in which the pattern wiring interval is greater than the first area. A step is for forming the polysilicon hardmask(22) on the etched layer. A step is for forming the sacrificial layer pattern in the first area on the polysilicon hardmask. A step is for forming the carbon containing polymer spacer(24) in the side wall of the sacrificial layer pattern. A step is for removing the sacrificial layer pattern. A step is for forming the photoresist pattern in the second part on the polysilicon hardmask. A step is for etching the polysilicon hardmask using the etching barrier as the carbon-containing polymer spacer and photoresist pattern. A step is for removing the carbon-containing polymer spacer and photoresist pattern by the photoresist strip process. A step is for etching the etched layer using etching barrier as the etched polysilicon hardmask.
|
