REDUNDANCY MEMORY CELL ACCESS CIRCUIT, SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME AND TEST METHOD OF SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device including a redundancy memory cell access circuit and test method thereof is provided to raise a yield by reducing a test time. A semiconductor memory device(10) comprises a redundancy memory cell array(150) and a redundancy memory cell access circuit(800). The redundancy memory cell array includes a redundancy memory cell for replacing a defective memory cell. The redundancy memory cell access circuit accesses the redundancy memory cell corresponding to an unprogrammed fuse signal by being enabled in a first test mode signal, and accesses the redundancy memory cell corresponding to a normal address signal by being enabled in a second test mode signal.