| 摘要 |
A method for forming a metal electrode of a system in package is provided to reclaim with copper a penetration hole in which depth is deep compared with an entrance side through an OSP coating, electroless copper plating and electrolysis copper plating process. A method for forming a metal electrode of a system in package comprises a stacked layer type semiconductor device in which semiconductor devices are laminated into a plurality of layers. The method for forming a metal electrode of a system in package comprises: a step for forming a penetration hole passing through a plurality of layers; a step for coating the lower part of the penetration hole with an inflammable material in which viscosity is big; and a step for forming the penetrating electrode(122) by filling the penetration hole inside with copper. |
