| 摘要 |
The semiconductor device and a method of manufacture thereof are provided to remove the void generated when forming silicide on a part of the contact hole. The semiconductor device(100) comprises the substrate(110), the transistor(120), the insulating layer(130), the contact silicide(140), the contact(150), the metal wiring(160). The substrate comprises the transistor including the silicide(125) formed on the top of the gate(122), and the source/drain(124), the gate and source/drain. The insulating layer has the contact hole(131) on the region corresponding to silicide and is formed on the top of substrate. The contact silicide is formed in the contact hole which is the top of silicide and fills up the lower part of the contact hole. The contact is formed on the top of the contact silicide and the contact fills the contact hole. The metal wiring is formed on the top of the contact and the metal wiring is electrically connected to the contact.
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