FABRICATION METHOD OF SINGLE CRYSTAL SILICON ROD

摘要

A method of manufacturing a single-crystal silicon rod is provided to form a single-crystal silicon rod with preventing the shape of a rod pattern from being changed or cutting during progressing silicon crystallization of the rod pattern. A manufacturing method of a single-crystal silicon rod comprises: a first step for forming a first insulation layer(12) on a substrate; a step for forming contact holes(20) on the first insulation layer; a step for forming a amorphous silicon layer(24) on the contact hole and the first insulation layer; a step for forming a first rod pattern on the silicon layer to deviate from a radiated direction from the contact hole; a step for forming a second insulation layer covering the side of the first rod pattern on the first insulation layer; and a step for irradiating a laser beam in the amorphous silicon layer and crystallizing the amorphous silicon layer.