PHASE-CHANGE MEMORY UNIT, METHOD OF FORMING THE PHASE-CHANGE MEMORY UNIT, PHASE-CHANGE MEMORY DEVICE HAVING THE PHASE-CHANGE MEMORY UNIT AND METHOD OF MANUFACTURING THE PHASE-CHANGE MEMORY DEVICE

摘要

A phase-change memory unit and a manufacturing method thereof and a phase change memory device including this and a manufacturing method thereof are provide to authorize current from a conductive construct to a first electrode or a bottom electrode and as a conductive construct and/or an ohmic layer pattern are contacted with the side or bottom surface of the first electrode or the bottom electrode. A phase-change memory unit comprises an isolation structure(210), a conductive construct(225), a first electrode(250), a phase change material layer pattern(275), a second electrode(280). The isolation structure is formed on a substrate(200). The isolation structure has an opening(215) exposing substrate. The conductive construct is formed within the opening. The first electrode has a side wall and a bottom surface contacted with the conductive construct. The phase change material layer pattern is formed on the first electrode and isolation structure. The second electrode is formed on the phase change material layer pattern.