发明名称 APPARATUS FOR PROCESSING SUBSTRATE WITH ATMOSPHERIC PRESSURE PLASMA
摘要 An atmospheric pressure plasma system is provided to increase stability and a density of a atmospheric pressure plasma and to improve a processing yield according to increasing a collision ionizing process of the electronics. An atmospheric pressure plasma system comprises a housing, an upper electrode(112), a lower electrode(116) and a magnetic force generating part(130). A process gas is flown in at an atmosphere pressure state in the housing. The upper electrode is equipped in the housing. The lower electrode applies a radio frequency power and contains multiple gas exhaust ports. The magnetic force generation part is equipped at a lower part of the lower electrode and increases an electron trajectory between the upper electrode and the lower electrode.
申请公布号 KR20080111256(A) 申请公布日期 2008.12.23
申请号 KR20070059418 申请日期 2007.06.18
申请人 ADP ENGINEERING CO., LTD. 发明人 KIM, CHUN SIK
分类号 B01J19/08;H01L21/3065 主分类号 B01J19/08
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