发明名称 |
Method of forming high aspect ratio structures |
摘要 |
An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.
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申请公布号 |
US7468323(B2) |
申请公布日期 |
2008.12.23 |
申请号 |
US20040788899 |
申请日期 |
2004.02.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TOREK KEVIN;SHEA KEVIN;GRAETTINGER THOMAS |
分类号 |
H01L21/302;H01L21/02;H01L21/311;H01L21/3213;H01L21/461;H01L21/4763;H01L21/8242;H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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