发明名称 Post passivation structure for a semiconductor device and packaging process for same
摘要 A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.
申请公布号 US7468545(B2) 申请公布日期 2008.12.23
申请号 US20060430513 申请日期 2006.05.08
申请人 MEGICA CORPORATION 发明人 LIN MOU-SHIUNG;CHOU CHIEN-KANG;CHEN KE-HUNG
分类号 H01L29/06 主分类号 H01L29/06
代理机构 代理人
主权项
地址
您可能感兴趣的专利