| 摘要 |
A magnetic random access memory includes a magnetic recording element which includes a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction changes, and a nonmagnetic layer provided between the fixed layer and the recording layer, the recording layer having a first running portion, a first projecting portion and a second projecting portion, the first running portion which runs in a direction of axis of easy magnetization, the first and second projecting portions which project from two side surfaces of the first running portion, a mask layer which is arranged above the first running portion, and a first sidewall layer and a second sidewall layer which are formed on two side surfaces of the mask layer, respectively, and arranged on the first projecting portion and the second projecting portion, respectively.
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