发明名称 |
Strained silicon on a SiGe on SOI substrate |
摘要 |
An intermediate semiconductor structure is disclosed. The semiconductor structure includes a substrate; a relaxed Si1-xGex layer on the substrate, the relaxed Si1-xGex layer having at least one trench; an un-etched Si layer portion on the substrate and beneath the relaxed Si1-xGex layer along a periphery of the substrate providing structural support for the relaxed Si1-xGex layer along the periphery of the substrate; and at least one void between the relaxed Si1-xGex layer and the substrate, wherein the void encompasses an entire surface area of the substrate but for a portion of the substrate in contact with the un-etched Si layer portion.
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申请公布号 |
US7468538(B2) |
申请公布日期 |
2008.12.23 |
申请号 |
US20050061444 |
申请日期 |
2005.02.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;CHIDAMBARRAO DURESETI |
分类号 |
H01L27/01;H01L21/20;H01L21/336;H01L21/762;H01L29/10;H01L29/786 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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