发明名称 Structure and method for failure analysis in a semiconductor device
摘要 In a method and structure for semiconductor failure analysis, the structure comprises: a plurality of analytic fields disposed on a predetermined area of a semiconductor device; semiconductor transistors arranged in each of the analytic fields, the semiconductor transistors arranged in an array; wordlines arranged on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a first direction; and bitline structures on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a second direction, wherein the bitline structures are configured in different patterns in each of the plurality of analytic fields.
申请公布号 US7468530(B2) 申请公布日期 2008.12.23
申请号 US20050291242 申请日期 2005.11.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE KI-AM;KWON SANG-DEOK;LEE JONG-HYUN
分类号 H01L29/74 主分类号 H01L29/74
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