发明名称 Method of fabricating a heterojunction of organic semiconducting polymers
摘要 Provided is a method of forming a heterojunction of contiguous layers of organic semiconducting polymers. The method comprises firstly forming a layer of a first organic semiconducting polymer on a substrate. A solution of a film-forming material is then deposited on the layer of the first organic semiconducting polymer. The first organic semiconducting polymer is insoluble in this solution and so is not disturbed by its deposition. The deposited solution is then dried to form a temporary film having a thickness of less then 20 nm formed from the film-forming material. Next a solution of a second organic semiconducting polymer dissolved in an organic solvent is deposited on the temporary film and this solution dried. The solubility of the material forming the temporary film in the organic solvent and the thickness of the temporary film are such that the organic solvent permeates through the thickness of the temporary film during drying of the solution of the second organic semiconducting polymer. This causes the temporary film to break down but without disturbing the layer of the first organic semiconducting polymer so that the layer of the second organic semiconducting polymer is formed contiguously on the layer of the first organic semiconducting polymer.
申请公布号 US7468287(B2) 申请公布日期 2008.12.23
申请号 US20060363063 申请日期 2006.02.28
申请人 SEIKO EPSON CORPORATION 发明人 NEWSOME CHRISTOPHER;KUGLER THOMAS;LI SHUNPU;RUSSELL DAVID
分类号 H01L21/00;H01L51/00;H01L51/42 主分类号 H01L21/00
代理机构 代理人
主权项
地址