发明名称 Mask for photolithography, method of forming thin film, liquid crystal display device, and method of producing the liquid crystal display device
摘要 A mask for photolithography in which a semi-transmission film is formed so that the phase difference of lights passing through a semi-transmission portion and a transmission portion of the mask for photolithography is between (-�+2 m) pi and (�+2 m) pi inclusive, where m is an integer. The invention makes it possible to efficiently and properly form a thin film having a multi-step structure by a single process.
申请公布号 US7468239(B2) 申请公布日期 2008.12.23
申请号 US20040953301 申请日期 2004.09.29
申请人 SONY CORPORATION 发明人 IMAI MASATO;MAEHARA AKIRA;FUKUNAGA YOKO
分类号 G02F1/1343;G03F7/20;G02F1/1333;G02F1/1335;G03F1/00;G03F1/08;G03F1/14;G03F1/28;G03F1/68;G03F1/70;H01L21/027 主分类号 G02F1/1343
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