发明名称 |
Mask for photolithography, method of forming thin film, liquid crystal display device, and method of producing the liquid crystal display device |
摘要 |
A mask for photolithography in which a semi-transmission film is formed so that the phase difference of lights passing through a semi-transmission portion and a transmission portion of the mask for photolithography is between (-�+2 m) pi and (�+2 m) pi inclusive, where m is an integer. The invention makes it possible to efficiently and properly form a thin film having a multi-step structure by a single process. |
申请公布号 |
US7468239(B2) |
申请公布日期 |
2008.12.23 |
申请号 |
US20040953301 |
申请日期 |
2004.09.29 |
申请人 |
SONY CORPORATION |
发明人 |
IMAI MASATO;MAEHARA AKIRA;FUKUNAGA YOKO |
分类号 |
G02F1/1343;G03F7/20;G02F1/1333;G02F1/1335;G03F1/00;G03F1/08;G03F1/14;G03F1/28;G03F1/68;G03F1/70;H01L21/027 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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