发明名称 |
Method for manufacturing mold type semiconductor device |
摘要 |
A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a conductive layer and a connecting member. The method includes: forming the semiconductor part on a semiconductor substrate so that a cell portion is provided; forming the conductive layer on the substrate; forming a first resist layer to cover a part of the conductive layer corresponding to the cell portion; etching the conductive layer with the first resist layer as a mask so that a first conductive layer is provided; removing the first resist layer and forming a second conductive layer to cover a surface and an edge of the first conductive layer. The second conductive layer has a Young's modulus equal to or larger than the semiconductor substrate.
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申请公布号 |
US7468318(B2) |
申请公布日期 |
2008.12.23 |
申请号 |
US20070702498 |
申请日期 |
2007.02.06 |
申请人 |
DENSO CORPORATION |
发明人 |
HIRANO NAOHIKO;KATO NOBUYUKI;TESHIMA TAKANORI;SAKAMOTO YOSHITSUGU;MIURA SHOJI;NIIMI AKIHIRO |
分类号 |
H01L21/4763;H01L23/482;H01L23/485;H01L23/488 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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