发明名称 Method for manufacturing mold type semiconductor device
摘要 A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a conductive layer and a connecting member. The method includes: forming the semiconductor part on a semiconductor substrate so that a cell portion is provided; forming the conductive layer on the substrate; forming a first resist layer to cover a part of the conductive layer corresponding to the cell portion; etching the conductive layer with the first resist layer as a mask so that a first conductive layer is provided; removing the first resist layer and forming a second conductive layer to cover a surface and an edge of the first conductive layer. The second conductive layer has a Young's modulus equal to or larger than the semiconductor substrate.
申请公布号 US7468318(B2) 申请公布日期 2008.12.23
申请号 US20070702498 申请日期 2007.02.06
申请人 DENSO CORPORATION 发明人 HIRANO NAOHIKO;KATO NOBUYUKI;TESHIMA TAKANORI;SAKAMOTO YOSHITSUGU;MIURA SHOJI;NIIMI AKIHIRO
分类号 H01L21/4763;H01L23/482;H01L23/485;H01L23/488 主分类号 H01L21/4763
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