| 摘要 |
The back metallization chamber system is provided to prevent the contamination of wafer by blocking the by-product within the processing chamber from the wafer. The back metallization chamber system comprises the metal source receiving portion, the heating means, the shutter, the substrate holder(22), nitrogen gas nozzles(26a, 27a). The metal source receiving portion receives the metal source(30). The heating means heats the metal source within the metal source receiving portion. The shutter opens the top of the metal source receiving portion so that the metal source heated by the upper heating means disappear to the upper of the metal source. The substrate holder sets a plurality of wafers(21) to the upper of shutter in the state where the backplane is exposed to the metal source of the bottom side. The nitrogen gas nozzle comprises metal sources within the metal source receiving portion corresponded to a plurality of wafers settled within the substrate holder. The nitrogen gas nozzle sprays the nitrogen gas on the external circumference of wafer to the vertical down direction. The nitrogen gas nozzle sprays the nitrogen gas on the external circumference of the metal source to the vertical upward direction.
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