| 摘要 |
The method of forming the metal wiring in the semiconductor device is provided to reduce the wiring resistance of the via hole by forming the barrier metal layer around the via hole. The method of forming the metal wiring in the semiconductor device comprises as follows. A step is for forming the first metal wiring(2) on the semiconductor substrate(1). A step is for forming the insulating layer(3) in the upper part of the first metal wiring. A step is for forming the contact hole on the insulating layer or the via hole. A step is for successively forming the capping layer(6) which protects the barrier metal layer(5) in the semiconductor substrate and barrier metal layer. A step is for oxidizing the capping layer. A step is for depositing the contact metal material(7) at the upper part of the capping layer. A step is for planarizing until the insulating layer is exposed. A step is for forming the second metal wiring(8) on the insulating layer.
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