| 摘要 |
The method for fabricating vertical type CMOS image sensor is provided to guarantee the quality and reliability of the vertical type CMOS image by removing circular defects by applying selectively SiON. The method of manufacturing the vertical type CMOS image sensor comprises as follows. A step is for forming the color photo diode(2) including the red, green and blue the photodiode in photo diode region of the silicon epitaxial layer(1). A step is for forming the transistor in the transistor region of the silicon epitaxial layer having the color photo diode. A step is for forming the first IMD(1st inter-metal-dielectric)(6) layer including the via hole for the electrical contact on the silicon epitaxial layer having the transistor. A step is for forming metal lines(8, 9) on the first inter metal dielectric layer corresponding to the location of the via hole. A step is for forming the second IMD(2nd inter-metal-dielectric) layer including the via hole(7) for the electrical contact of the metal line on the first inter metal dielectric layer including metal line. A step is for forming the upper metal line on the corresponding position of the via hole formed in the second IMD. A step is for forming the passivation oxide(11) by forming the upper metal line. A step is for progressing annealing after the formation of passivation oxide. A step is for forming the high position protective film on the passivation oxide.
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